Applications of electron microscopy to the characterization of semiconductor nanowires

被引：6

作者：

Tham, D. ^{[1
]}

Nam, C. -Y. ^{[1
]}

Byon, K. ^{[1
]}

Kim, J. ^{[1
]}

Fischer, J. E. ^{[1
]}

机构：

[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2006年 / 85卷 / 03期

关键词：

D O I：

10.1007/s00339-006-3705-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We review our current progress on semiconductor nanowires of beta-Ga2O3, Si and GaN. These nanowires were grown using both vapor-solid (VS) and vapor-liquid-solid (VLS) mechanisms. Using transmission electron microscopy (TEM) we studied their morphological, compositional and structural characteristics. Here we survey the general morphologies, growth directions and a variety of defect structures found in our samples. We also outline a method to determine the nanowire growth direction using TEM, and present an overview of device fabrication and assembly methods developed using these nanowires.

引用

页码：227 / 231

页数：5

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