Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors

Deep traps responsible for current collapse phenomena in GaN metal-semiconductor field-effect transistors have been detected using a spectroscopic technique that employs the optical reversibility of current collapse to determine the photoionization spectra of the traps involved. In the n-channel device investigated, the two electron traps observed were found to be very deep and strongly coupled to the lattice. Photoionization thresholds for these traps were determined at 1.8 and at 2.85 eV. Both also appear to be the same traps recently associated with persistent photoconductivity effects in GaN. (C) 1999 American Institute of Physics. [S0003-6951(99)04351-X].