New mechanisms in photo-assisted MOVPE of II-VI semiconductors

被引：10

作者：

Irvine, SJC ^{[1
]}

Stafford, A ^{[1
]}

Ahmed, MU ^{[1
]}

Brown, A ^{[1
]}

Kheyrandish, H ^{[1
]}

机构：

[1] MATS UK LTD,LIVERPOOL L7 9PG,MERSEYSIDE,ENGLAND

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

II-VI semiconductors; metalorganic vapor phase epitaxy (MOVPE); photo-assisted growth;

D O I：

10.1007/s11664-997-0222-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first detailed comparison has been made of the metalorganic vapor phase epitaxy growth rates of CdTe, ZnTe, and ZnSe, measured in situ with laser reflectometry. The comparison also includes the photo-assisted growth with visible radiation from an argon ion laser. Using a standard Group II precursor (DMCd or DMZn.TEN) partial pressure of 1.5 x 10(-4) atm, VI/II ratio of 1 and DIPM (M = Te, Se) the maximum growth rates are in the region of 10 to 15 AU/s. Decrease in growth rates of ZnTe at higher temperatures or higher laser powers have been attributed to the desorption from the substrate of unreacted Te precursor. The behavior of DTBSe is quite different from DIPSe for both pyrolytic and photo-assisted growth. The maximum growth rate is around 1 AU/s with very little photo-enhancement, except at 300 degrees C. Secondary ion mass spectroscopy analysis of hydrogen concentration in the ZnSe layers shows high concentrations, up to 5.9 x 10(19) atoms cm(-3) for DTBSe grown ZnSe under pyrolytic conditions. These results show that the growth kinetics play an important part in the incorporation of hydrogen and passivation of acceptor doped material.

引用

页码：723 / 727

页数：5

共 15 条

[1] EVIDENCE FOR A SURFACE-BOUND FREE-RADICAL MECHANISM DURING THE DECOMPOSITION OF (I)PR2TE IN THE PRESENCE OR ABSENCE OF MERCURY AND OR ME2CD UNDER MOVPE CONDITIONS OBTAINED FROM DEUTERIUM-LABELED PRECURSORS [J].