Growth of nitrogen-doped ZnSe by photoassisted metalorganic chemical vapor deposition

被引：5

作者：

Fujita, Y

Terada, T

Fujii, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 7B期

关键词：

ZnSe; p-type conduction; nitrogen doping; hydrogen passivation; tertiary butylamine; photoassisted MOCVD; secondary ion mass spectrometry; Hall measurement;

D O I：

10.1143/JJAP.35.L923

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of nitrogen-doped ZnSe using dimethylzinc and dimethylselenide in the growth temperature range of 330 to 390 degrees C by photoassisted metalorganic chemical vapor deposition (MOCVD) employing an ultrahigh-pressure Hg lamp was investigated. t-Butylamine was used as a nitrogen dopant source. A nitrogen concentration of more than 10(18) cm(-3) was obtained. The samples showed p-type conduction, and a maximum hole concentration of 3.0 x 10(18) cm(-3) was achieved by MOCVD.

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页码：L923 / L925

页数：3

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