PHOTOASSISTED METALORGANIC VAPOR-PHASE EPITAXY OF NITROGEN-DOPED ZNSE USING TERTIARYBUTYLAMINE AS DOPING SOURCE

被引：22

作者：

FUJITA, S

ASANO, T

MAEHARA, K

FUJITA, S

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto

[2] Department of Electrical Engineering, Kyoto University, Kyoto

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 8B期

关键词：

ZNSE; NITROGEN DOPING; PHOTOASSISTED MOVPE; TERTIARYBUTYLAMINE; BLUE ELECTROLUMINESCENCE;

D O I：

10.1143/JJAP.32.L1153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen doping into ZnSe was carried out by photoassisted metalorganic vapor-phase epitaxy using diethylzinc and dimethylselenium. Tertiarybutylamine (t-BNH2) Was used as a doping source. Photoluminescence, electrical properties of Schottky diodes, and electroluminescence from ZnSe:N/n-ZnSe:Ga diodes revealed acceptor incorporation and p-type behavior in the ZnSe:N layers. Low-temperature (350-degrees-C) growth and low irradiation intensity (45 mW/cm2) were found to be desirable for effective doping. As an example, for the ZnSe:N layer with nitrogen concentration of 5 x 10(17) cm-3 revealed by secondary ion mass spectroscopy, net acceptor concentration was estimated to be 2 x 10(17) cm-3 from capacitance measurements of the Schottky diodes as a first approximation.

引用

页码：L1153 / L1156

页数：4

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