LUMINESCENCE AND ELECTRICAL-PROPERTIES OF ZNSE GROWN BY PHOTO-ASSISTED OMVPE

ZnSe epilayers on GaAs grown by photo (xenon lamp)-assisted OMVPE were characterized by photoluminescence and Hall effect measurements. Epilayers grown under irradiation without intentional doping exhibited n-type conductivity with the electron concentrations of 1016-1017cm-3. This phenomena was attributed to our new finding that the incorporation of donor impurities (residual or intentionally introduced) to the epilayers is considerably enhanced by 400 < λ < 800 nm radiation although it is not highly responsible for the growth rate enhancement. The irradiation of λ < 400 nm is desirable in order to obtain higher purity epilayers. However, if the purer source materials can be available for the epitaxial growth, we can avoid the incorporation of residual impurities even by the irradiation of 400 < λ < 800 nm, and this phenomena will be applied to a promising doping technique. © 1989.