USE OF ETHYLIODIDE IN PREPARATION OF LOW-RESISTIVITY N-TYPE ZNSE BY METALORGANIC VAPOR-PHASE EPITAXY

被引：30

作者：

SHIBATA, N ^{[1
]}

OHKI, A ^{[1
]}

ZEMBUTSU, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, TOKAI, IBARAKI 31911, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 02期

关键词：

D O I：

10.1143/JJAP.27.L251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L251 / L253

页数：3

共 7 条

CUSANO, DA .

[2]

KAMATA A, 1987, 3RD INT C 2 6 COMP M, P164

NIINA, T ;

MINATO, T ;

YONEDA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06) :L387-L389

[4]

OHKAWA K, 1986, 18TH C SOL STAT DEV, P635

SHIBATA, N ;

OHKI, A ;

ZEMBUTSU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (08) :1305-1309

STUTIUS, W .

[7] CHARACTERIZATION OF ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J].

YAO, T .