ELECTRICAL AND PHOTOLUMINESCENCE PROPERTIES OF IODINE-DOPED ZNSE FILMS GROWN BY LOW-PRESSURE MOVPE

被引：13

作者：

YOSHIKAWA, A

NOMURA, H

YAMAGA, S

KASAI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 10期

关键词：

D O I：

10.1143/JJAP.27.L1948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1948 / L1951

页数：4

共 11 条

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[5] ANTIMONY-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J].

PARK, RM ;

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SMITH, TL .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) :2851-2853

[6]

SEEGER K, 1982, SEMICONDUCTOR PHYSIC, pCH3

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (02) :L251-L253

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[10] NEW AND SIMPLE MOCVD TECHNIQUE USING COMPLETELY GASEOUS MO-SOURCES ESPECIALLY USEFUL FOR GROWING ZN-CHALCOGENIDE FILMS [J].

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