GROWTH OF NITROGEN-DOPED ZNSE AND INHIBITION OF HYDROGEN PASSIVATION OF NITROGEN ACCEPTOR BY PHOTOASSISTED METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Growth of nitrogen doped ZnSe was carried out at the growth temperature of 330 to 390 degrees C by photoassisted metal-organic chemical vapor deposition (MOCVD). Nitrogen concentration of more than 10(18) cm(-3) was obtained at growth temperatures lower than 350 degrees C using ammonia and t-butylamine as nitrogen dopant sources. Furthermore, hydrogen passivation of nitrogen, which is regarded as a possible cause of acceptor compensation in the layer doped using ammonia, was drastically decreased and p-type layer with hole concentration of 8.3 x 10(17) cm(-3) was obtained using t-butylamine.