Photoluminescence spectra of nitrogen-doped ZnSe by photoassisted metal-organic chemical vapor deposition

被引：6

作者：

Fujita, Y

Terada, T

Fujii, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 4B期

关键词：

ZnSe; photoluminescence; p-type; nitrogen doping; tertiary butylamine; photoassisted MOCVD; secondary ion mass spectrometry;

D O I：

10.1143/JJAP.35.L473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence spectra of nitrogen-doped ZnSe grown by photoassisted metal-organic chemical vapor deposition (MOCVD) at temperatures of 330 and 350 degrees C and with nitrogen concentration ranging from 2.0 x 10(17) cm(-3) to 3.0 x 10(18) cm(-3) were measured. The spectra of lightly doped samples showed a donor-to-acceptor (D-A) pair emission line at 2.696 eV with LO phonon replicas. The spectra for heavily doped samples were dominated by a broad-band D-A pair emission at longer wavelengths. The comparison of photoluminescence spectra of nitrogen-doped ZnSe grown by MOCVD and molecular beam epitaxy (MBE) is discussed.

引用

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页码：L473 / L475

页数：3

相关论文

共 11 条

[1] PHOTOASSISTED METALORGANIC VAPOR-PHASE EPITAXY OF NITROGEN-DOPED ZNSE USING TERTIARYBUTYLAMINE AS DOPING SOURCE [J].

FUJITA, S ;

ASANO, T ;

MAEHARA, K ;

FUJITA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (8B) :L1153-L1156

[2] GROWTH OF NITROGEN-DOPED ZNSE AND INHIBITION OF HYDROGEN PASSIVATION OF NITROGEN ACCEPTOR BY PHOTOASSISTED METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

FUJITA, Y ;

TERADA, T ;

SUZUKI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (8B) :L1034-L1036

[3]

HAASE MA, 1991, APPL PHYS LETT, V70, P439

[4] COMPENSATION PROCESSES IN NITROGEN DOPED ZNSE [J].

HAUKSSON, IS ;

SIMPSON, J ;

WANG, SY ;

PRIOR, KA ;

CAVENETT, BC .

APPLIED PHYSICS LETTERS, 1992, 61 (18) :2208-2210

[5] ORIGIN OF THE LOW DOPING EFFICIENCY OF NITROGEN ACCEPTORS IN ZNSE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

KAMATA, A ;

MITSUHASHI, H ;

FUJITA, H .

APPLIED PHYSICS LETTERS, 1993, 63 (24) :3353-3354

[6] CONTINUOUS-WAVE OPERATION OF 489.9NM BLUE LASER-DIODE AT ROOM-TEMPERATURE [J].

NAKAYAMA, N ;

ITOH, S ;

OKUYAMA, H ;

OZAWA, M ;

OHATA, T ;

NAKANO, K ;

IKEDA, M ;

ISHIBASHI, A ;

MORI, Y .

ELECTRONICS LETTERS, 1993, 29 (25) :2194-2195

[7] CHARACTERISTICS OF P-TYPE ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY WITH RADICAL DOPING [J].

OHKAWA, K ;

KARASAWA, T ;

MITSUYU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2A) :L152-L155

[8] NITROGEN-DOPED P-TYPE ZNSE FILMS GROWN BY MOVPE [J].

OHKI, A ;

SHIBATA, N ;

ANDO, K ;

KATSUI, A .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :692-696

[9] P-TYPE ZNSE BY NITROGEN ATOM BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

PARK, RM ;

TROFFER, MB ;

ROULEAU, CM ;

DEPUYDT, JM ;

HAASE, MA .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2127-2129

[10]

QUI J, 1991, APPL PHYS LETT, V59, P2992