Hot carrier reliability of n-MOSFET with ultra-thin HfO2 gate dielectric and poly-Si gate

被引：14

作者：

Lu, Q ^{[1
]}

Takeuchi, H ^{[1
]}

Lin, R ^{[1
]}

King, TJ ^{[1
]}

Hu, CM ^{[1
]}

Onishi, K ^{[1
]}

Choi, R ^{[1
]}

Kang, CS ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2002年

关键词：

D O I：

10.1109/RELPHY.2002.996680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot carrier reliability of n-channel MOSFETs with 11 Angstrom EOT HfO2 gate dielectric and poly-Si gate was studied. Under peak I-SUB stress conditions, n-FETs with HfO2 gate dielectric show longer lifetime when compared to SiO2 n-FETs for the same stress substrate current. At room temperature, the 0.15 mum channel length HfO2 n-FETs are projected to have 10-year lifetime at V-D=2.76 V.

引用

页码：429 / 430

页数：2

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