Sensitive Flexible Magnetic Sensors using Organic Transistors with Magnetic-Functionalized Suspended Gate Electrodes

被引:58
作者
Zang, Yaping [1 ,2 ]
Zhang, Fengjiao [1 ,2 ]
Huang, Dazhen [1 ,2 ]
Di, Chong-an [1 ]
Zhu, Daoben [1 ]
机构
[1] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
关键词
FIELD-EFFECT TRANSISTORS; PRESSURE SENSORS; SPIN; MAGNETORESISTANCE; DEVICES; SKIN;
D O I
10.1002/adma.201503542
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Utilizing a magnetic-functionalized suspended gate with combined features of outstanding conductivity, flexibility, and magnetic properties, flexible magnetic sensor based on an organic field-effect transistor (OFET), with a high sensitivity of 115.2% mT(-1) is demonstrated. Gate engineering enables the sensing devices to possess promising applications for flexible touchless switches and spatially-resolved magnetic-imaging elements.
引用
收藏
页码:7979 / 7985
页数:7
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