Sensitive Flexible Magnetic Sensors using Organic Transistors with Magnetic-Functionalized Suspended Gate Electrodes

被引：58

作者：

Zang, Yaping ^{[1
,2
]}

Zhang, Fengjiao ^{[1
,2
]}

Huang, Dazhen ^{[1
,2
]}

Di, Chong-an ^{[1
]}

Zhu, Daoben ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

ADVANCED MATERIALS | 2015年 / 27卷 / 48期

关键词：

FIELD-EFFECT TRANSISTORS; PRESSURE SENSORS; SPIN; MAGNETORESISTANCE; DEVICES; SKIN;

D O I：

10.1002/adma.201503542

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Utilizing a magnetic-functionalized suspended gate with combined features of outstanding conductivity, flexibility, and magnetic properties, flexible magnetic sensor based on an organic field-effect transistor (OFET), with a high sensitivity of 115.2% mT(-1) is demonstrated. Gate engineering enables the sensing devices to possess promising applications for flexible touchless switches and spatially-resolved magnetic-imaging elements.

引用

收藏

页码：7979 / 7985

页数：7

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