Surface control of 4H-SiC MESFETs

被引：8

作者：

Hilton, KP ^{[1
]}

Uren, MJ ^{[1
]}

Hayes, DG ^{[1
]}

Johnson, HK ^{[1
]}

Wilding, PJ ^{[1
]}

机构：

[1] QinetiQ Ltd, Malvern WR14 3PS, Worcs, England

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

high temperature; instabilities; MESFETs; passivation; recess etch; surface control;

D O I：

10.4028/www.scientific.net/MSF.389-393.1387

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon Carbide MESFETs have been fabricated using two different process flows. It is shown that surface passivation with a thermally grown oxide, combined with a gate recess, results in reduced current instability. It is also shown that these devices operate well at 400degreesC.

引用

页码：1387 / 1390

页数：4

共 6 条

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