Surface induced instabilities in 4H-SiC microwave MESFETs

被引：29

作者：

Hilton, KP ^{[1
]}

Uren, MJ ^{[1
]}

Hayes, DG ^{[1
]}

Wilding, PJ ^{[1
]}

Johnson, HK ^{[1
]}

Guest, JJ ^{[1
]}

Smith, BH ^{[1
]}

机构：

[1] DERA, Def Res & Evaluat Agcy, Malvern WR14 3PS, Worcs, England

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

MESFET; microwave power; surface traps;

D O I：

10.4028/www.scientific.net/MSF.338-342.1251

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mesa isolated 4-H SiC microwave MESFETs showed a relaxation in drain current following application of operating bias on a timescale of seconds. It is shown that this was associated with charging of the exposed surface between the gate and the source and drain contacts, and that this impacted CW performance. Pulse operation of the devices nevertheless gave good power performance of 2.5W/mm at 2GHz.

引用

页码：1251 / 1254

页数：4

共 6 条

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