X-ray-diffraction study of size-dependent strain in quantum-wire structures

被引：48

作者：

Shen, Q ^{[1
]}

Kycia, SW ^{[1
]}

Tentarelli, ES ^{[1
]}

Schaff, WJ ^{[1
]}

Eastman, LF ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.54.16381

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a synchrotron x-ray-diffraction study of the strain field in embedded In0.2Ga0.8As/GaAs (001) quantum wires of widths 50-250 nm. Our results show a size-dependent orthorhombic lattice deformation in the wires and a linearly strained interfacial region near the wire sidewalls. The measured strain is responsible for an unusual band-gap energy increase that is several times larger than the quantum confinement effect, indicating that strain effects contribute significantly to band-edge energies in this and other quantum structures.

引用

页码：16381 / 16384

页数：4

共 15 条

[11] SIZE-DEPENDENT PHOTOLUMINESCENCE ENERGY AND INTENSITY OF SELECTIVE ELECTRON-CYCLOTRON RESONANCE-ETCHED STRAINED INGAAS/GAAS QUANTUM BOXES [J].