Feasibility Study of Ion-Cut InP Photoconductor Devices on Glass Substrates

被引：3

作者：

Chen, Wayne ^{[1
]}

Zhang, Arthur ^{[1
]}

Chen, Peng ^{[1
]}

Pulsifer, John E. ^{[2
]}

Alford, Terry L. ^{[3
]}

Kuech, Thomas F. ^{[4
]}

Lau, Silvanus S. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Univ Calif San Diego, Energy Res Ctr, La Jolla, CA 92093 USA

[3] Arizona State Univ, Sch Mat, Tempe, AZ 85287 USA

[4] Univ Wisconsin, Dept Chem & Biol Engn, Madison, WI 53706 USA

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 02期

基金：

美国国家科学基金会;

关键词：

HYDROGEN-INDUCED EXFOLIATION; PROTON-BOMBARDED INP; HETEROSTRUCTURES; PHOTODETECTORS; FE;

D O I：

10.1143/APEX.2.022201

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

Photoconductive devices, prefabricated on semi-insulating InP, were integrated on glass substrates using hydrogen-induced layer transfer (ion-cut) combined with adhesive bonding. The prefabricated photodetectors were implanted through by hydrogen ions and transferred twice to achieve device-up configuration. The transferred devices exhibited both higher photocurrent and dark current when compared with bulk devices. Transient response measurement showed a long-lived tail that persisted after the initial "fast" response, indicative of trap-mediated transport due to the implant-related localized states. Our study showed that the ion-cutting layer transfer process yielded functional photodetectors. The residual defects remain a challenging issue for the ion-cut process. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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