Effects of hydrogen implantation temperature on InP surface blistering

被引：18

作者：

Chen, Peng ^{[1
]}

Di, Zengfeng ^{[2
]}

Nastasi, M. ^{[2
]}

Bruno, Elena ^{[3
,4
]}

Grimaldi, Maria Grazia ^{[3
,4
]}

Theodore, N. David ^{[5
]}

Lau, S. S. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[3] Catania Univ, MATIS, CNR, INFM, I-95123 Catania, Italy

[4] Catania Univ, Dipartimento Fis Astron, I-95123 Catania, Italy

[5] Freescale Semicond Inc, Analog & Mixed Signal Technol, Tempe, AZ 85284 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 20期

关键词：

D O I：

10.1063/1.2926682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effects of hydrogen implantation temperature on the ion-cut process of InP by examining the correlation between surface blistering and the ion induced damage, hydrogen distribution, and strain. Using Rutherford backscattering spectrometry, elastic recoil detection, and x-ray diffraction, it was found that both the point defects induced by the hydrogen implantation and the in-plane compressive stress were necessary for hydrogen trapping and H-platelet nucleation and growth. The control of implantation temperature is crucial for creating sufficient defects and strain to induce surface blistering or layer exfoliation. (C) 2008 American Institute of Physics.

引用

页数：3

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