Profiling the Interface Electron Gas of LaAlO3/SrTiO3 Heterostructures with Hard X-Ray Photoelectron Spectroscopy

被引：250

作者：

Sing, M. ^{[1
]}

Berner, G. ^{[1
]}

Goss, K. ^{[1
]}

Mueller, A. ^{[1
]}

Ruff, A. ^{[1
]}

Wetscherek, A. ^{[1
]}

Thiel, S. ^{[2
]}

Mannhart, J. ^{[2
]}

Pauli, S. A. ^{[3
]}

Schneider, C. W. ^{[3
]}

Willmott, P. R. ^{[3
]}

Gorgoi, M. ^{[4
]}

Schaefers, F. ^{[4
]}

Claessen, R. ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

[3] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

[4] Berliner Elektronenspeicherring Gesell Synchrotro, D-12489 Berlin, Germany

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 17期

关键词：

OXIDES;

D O I：

10.1103/PhysRevLett.102.176805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The conducting interface of LaAlO3/SrTiO3 heterostructures has been studied by hard x-ray photoelectron spectroscopy. From the Ti 2p signal and its angle dependence we derive that the thickness of the electron gas is much smaller than the probing depth of 4 nm and that the carrier densities vary with increasing number of LaAlO3 overlayers. Our results point to an electronic reconstruction in the LaAlO3 overlayer as the driving mechanism for the conducting interface and corroborate the recent interpretation of the superconducting ground state as being of the Berezinskii-Kosterlitz-Thouless type.

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页数：4

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