The interaction of positive muons with photogenerated charge carriers in crystalline silicon

被引：6

作者：

Scheuermann, R

Major, J

Seeger, A

Schimmele, L

Schmidl, J

Herlach, D

机构：

[1] RIKEN, Inst Phys & Chem Res, Muon Sci Lab, Wako, Saitama 3510198, Japan

[2] Univ Stuttgart, Inst Theoret & Angew Phys, D-70569 Stuttgart, Germany

[3] Max Planck Inst Met Forsch, D-70569 Stuttgart, Germany

[4] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

来源：

PHYSICA B | 2000年 / 289卷

关键词：

silicon; photoexcitation; muonium dynamics;

D O I：

10.1016/S0921-4526(00)00245-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoinduced effects on the dynamics of the diamagnetic muon species (mu(d)) and of bond-centred muonium Mu(BC)(0), in crystalline silicon were studied as a function of temperature and doping. Below 40 K, the photoinduced relaxation in boron-doped as well as undoped silicon can be explained by the temperature and doping dependence of the mobility of the photogenerated charge carriers. In undoped silicon, the observed photoinduccd enhancement of the precession amplitude and of the muon-spin relaxation of the diamagnetic signal indicates that a long-living intermediate diamagnetic state is formed in the illuminated samples. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：534 / 537

页数：4

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