Uniaxial-strain-induced transition from type-II to type-I band configuration of quantum well microtubes

被引：16

作者：

Ohtani, N

Kishimoto, K

Kubota, K

Saravanan, S

Sato, Y

Nashima, S

Vaccaro, P

Aida, T

Hosoda, M

机构：

[1] Commun Res Labs, Koganei, Tokyo 1848795, Japan

[2] Osaka City Univ, Sumiyoshi Ku, Osaka 5588585, Japan

[3] ATR Adapt Commun Res Labs, Kyoto 6190288, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 21卷 / 2-4期

关键词：

microtube; uniaxial strain; quantum well; photoluminescence;

D O I：

10.1016/j.physe.2003.11.112

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We fabricated quantum well (QW) microtubes by rolling up thin films containing QWs and measured their photoluminescence (PL) properties. Before fabricating microtubes, no PL signal is observed in the QW at all, because their band configuration is indirect, i.e., type-II. However, PL signal is detected in the QW microtubes. This result clearly indicates that the transition from type-II to type-I band configuration of QW microtubes is induced by uniaxial-strain effect. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：732 / 736

页数：5

共 9 条

[1] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J].