Carrier transport in GaAs/AlAs type-II superlattices under electric field:: Switch from X-X to Γ-Γ transfer

被引：2

作者：

Hosoda, M

Ohtani, N

Kuroyanagi, K

Domoto, C

机构：

[1] Osaka City Univ, Dept Appl Phys, Sumiyoshi Ku, Osaka 5588585, Japan

[2] ATR, Adapt Commun Res Labs, Seika, Kyoto 61902, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 14期

关键词：

D O I：

10.1063/1.126194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A switch in carrier transport from X-X to Gamma-X-Gamma is found in a GaAs/AlAs type-II superlattice under an electric field. This phenomenon is caused by an X-Gamma transfer, as demonstrated by the photoluminescence, photocurrent response, and current-voltage characteristics. Under a high electric field, most of the electrons flow through the Gamma path even in type-II superlattices. (C) 2000 American Institute of Physics. [S0003-6951(00)00214-X].

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页码：1866 / 1868

页数：3

相关论文

共 15 条

[1] ULTRAFAST TRANSIENT ABSORPTION MEASUREMENT OF THE ELECTRON-LO PHONON-SCATTERING TIME IN GAAS-AL0.33GA0.67AS MULTIPLE-QUANTUM WELLS [J].

COLLINGS, D ;

SCHUMACHER, KL ;

RAKSI, F ;

HUGHES, HP ;

PHILLIPS, RT .

APPLIED PHYSICS LETTERS, 1994, 64 (07) :889-891

[2] EXPERIMENTAL-STUDY OF THE GAMMA-X ELECTRON-TRANSFER IN TYPE-II (AL,GA)AS/ALAS SUPERLATTICES AND MULTIPLE-QUANTUM-WELL STRUCTURES [J].

FELDMANN, J ;

NUNNENKAMP, J ;

PETER, G ;

GOBEL, E ;

KUHL, J ;

PLOOG, K ;

DAWSON, P ;

FOXON, CT .

PHYSICAL REVIEW B, 1990, 42 (09) :5809-5821

[3]

FELDMANN J, 1993, OPTICS SEMICONDUCTOR, pCHI7

[4] QUANTUM-WELL CARRIER SWEEP OUT - RELATION TO ELECTROABSORPTION AND EXCITON SATURATION [J].

FOX, AM ;

MILLER, DAB ;

LIVESCU, G ;

CUNNINGHAM, JE ;

JAN, WY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (10) :2281-2295

[5] Influence of Gamma-X resonances on Gamma(1) ground state electron occupation in type-I GaAs/AlAs superlattice [J].

Hosoda, M ;

Tominaga, K ;

Ohtani, N ;

Mimura, H ;

Nakayama, M .

APPLIED PHYSICS LETTERS, 1997, 70 (12) :1581-1583

[6] EVIDENCE FOR GAMMA-CHI TRANSPORT IN TYPE-I GAAS/ALAS SEMICONDUCTOR SUPERLATTICES [J].

HOSODA, M ;

OHTANI, N ;

MIMURA, H ;

TOMINAGA, K ;

DAVIS, P ;

WATANABE, T ;

TANAKA, G ;

FUJIWARA, K .

PHYSICAL REVIEW LETTERS, 1995, 75 (24) :4500-4503

[7] Avalanche breakdown mechanism originating from Gamma-X-Gamma transfer in GaAs/AlAs superlattices [J].

Hosoda, M ;

Tominaga, K ;

Ohtani, N ;

Kuroyanagi, K ;

Egami, N ;

Mimura, H ;

Kawashima, K ;

Fujiwara, K .

APPLIED PHYSICS LETTERS, 1997, 71 (19) :2827-2829

[8] Carrier transport affected by Γ-X transfer in type-I GaAs/AlAs superlattices [J].

Hosoda, M ;

Ohtani, N ;

Mimura, H ;

Tominaga, K ;

Watanabe, T ;

Inomata, H ;

Fujiwara, K .

PHYSICAL REVIEW B, 1998, 58 (11) :7166-7180

[9] Observation of Gamma-X resonances in type-I GaAs/AlAs semiconductor superlattices: Anomaly in photoluminescence [J].

Hosoda, M ;

Mimura, H ;

Ohtani, N ;

Tominaga, K ;

Fujita, K ;

Watanabe, T ;

Inomata, H ;

Nakayama, M .

PHYSICAL REVIEW B, 1997, 55 (20) :13689-13696

[10] INDIRECT-DIRECT ANTICROSSING IN GAAS-ALAS SUPERLATTICES INDUCED BY AN ELECTRIC-FIELD - EVIDENCE OF GAMMA-X MIXING [J].

MEYNADIER, MH ;

NAHORY, RE ;

WORLOCK, JM ;

TAMARGO, MC ;

DEMIGUEL, JL ;

STURGE, MD .

PHYSICAL REVIEW LETTERS, 1988, 60 (13) :1338-1341