Large-Scale Fabrication of 4-nm-Channel Vertical Protein-Based Ambipolar Transistors

被引：44

作者：

Mentovich, Elad D. ^{[1
,2
]}

Belgorodsky, Bogdan ^{[1
]}

Kalifa, Itsik ^{[2
]}

Cohen, Hagai ^{[3
]}

Richter, Shachar ^{[1
,2
]}

机构：

[1] Tel Aviv Univ, Sch Chem, IL-69978 Tel Aviv, Israel

[2] Tel Aviv Univ, Univ Ctr Nanosci & Nanotechnol, IL-69978 Tel Aviv, Israel

[3] Weizmann Inst Sci, Dept Chem Res Support, IL-76100 Rehovot, Israel

来源：

NANO LETTERS | 2009年 / 9卷 / 04期

基金：

以色列科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; TRANSPORT; MODEL;

D O I：

10.1021/nl802694k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We suggest a universal method for the mass production of nanometer-sized molecular transistors. This vertical-type device was fabricated using conventional photolithography and self-assembly methods and was processed in parallel fashion. We used this transistor to investigate the transport properties of a single layer of bovine serum albumin protein. This 4-nm-channel device exhibits low operating voltages, ambipolar behavior, and high gate sensitivity. The operation mechanism of this new device is suggested, and the charge transfer through the protein layer was explored.

引用

页码：1296 / 1300

页数：5

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