Magnetoelectric coupling in epitaxial CoFe2O4 on BaTiO3

被引:105
作者
Chopdekar, R. V. [1 ]
Suzuki, Y.
机构
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
关键词
D O I
10.1063/1.2370881
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors have synthesized epitaxial CoFe2O4 films on piezoelectric BaTiO3 single crystal substrates as a model magnetoelectric system. The BaTiO3 substrate provides a surface lattice that can be dynamically changed in an attempt to alter the strain state and hence the magnetization of the CoFe2O4 film. Magnetization measurements indicate that the magnetic anisotropy of CoFe2O4 is dominated by compressive epitaxial strain effects and can be understood in terms of the symmetry of the substrate surface unit cell. (c) 2006 American Institute of Physics.
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页数:3
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