Stacking faults in YBa2Cu3O7-x:: Measurement using x-ray diffraction and effects on critical current

被引：72

作者：

Specht, E. D. ^{[1
]}

Goyal, A.

Li, J.

Martin, P. M.

Li, X.

Rupich, M. W.

机构：

[1] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

[2] Amer Superconductor Corp, Westborough, MA 01581 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期

基金：

美国能源部;

关键词：

D O I：

10.1063/1.2364185

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The density n of stacking faults (SFs) in epitaxial YBa2Cu3O7-x (Y123) films, consisting of extra CuO planes, is measured by fitting x-ray diffraction patterns using a random stacking model. The SF density is n=0.068 nm(-1) in films grown by metal-organic deposition on textured templates and optimized for high I-c. The presence of SF is correlated with pinning of magnetic field (H) applied in the Y123 ab plane. SF can be nearly eliminated by a high temperature anneal, or by adding excess Dy, resulting in I-c which is nearly independent of the orientation of H.

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页数：3

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