High peak-to-valley current ratio GaInAs/GaInP resonant tunneling diodes

被引：3

作者：

Oobo, T ^{[1
]}

Takemura, R ^{[1
]}

Suhara, M ^{[1
]}

Miyamoto, Y ^{[1
]}

Furuya, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,RES CTR QUANTUM EFFECT ELECT,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 08期

关键词：

resonant tunneling diodes; GaInAs/GaInP; OMVPE; strained layer;

D O I：

10.1143/JJAP.36.5079

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

As an Al-free material system, the GaInAs/GaInP heterostructure has a large conduction-band discontinuity. We,report the fabrication of GaInAs/GaInP resonant tunneling diodes which exhibit current density-voltage characteristics with a peak-to-valley current ratio of 7.8 at 4.2K. To our knowledge, this is the highest value obtained for this material system.

引用

页码：5079 / 5080

页数：2

共 6 条

[1]

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[3]

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[4]

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[5]

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[6] HIGH P/V RATIO OF GAINAS INP RESONANT TUNNELING DIODE GROWN BY OMVPE [J].

SEKIGUCHI, T ;

MIYAMOTO, Y ;

FURUYA, K .

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