HIGH P/V RATIO OF GAINAS INP RESONANT TUNNELING DIODE GROWN BY OMVPE

被引：8

作者：

SEKIGUCHI, T

MIYAMOTO, Y

FURUYA, K

机构：

[1] Department of Electric and Electronics Engineering, Tokyo Institute of Technology, Meguroku, Tokyo, 152, Ookayama

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90555-W

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper reports higher peak-to-valley current (P/V) ratio in GaInAs/InP resonant tunneling diode (RTD) than ever. In organometallic vapor phase epitaxy, the P/V ratio depends strongly on the partial pressure of the group V gas. The obtained P/V ratios are 9.7 and 7.4 at 4 and 77 K, respectively. The width of the resonance level is 11 meV at 4 K.

引用

页码：807 / 811

页数：5

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