HIGH-QUALITY N-GAINAS GROWN BY OMVPE USING SI2H6 BY HIGH-VELOCITY FLOW

被引：2

作者：

MIYAMOTO, Y ^{[1
]}

KOHTOKU, M ^{[1
]}

YAMAURA, S ^{[1
]}

FURUYA, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期

关键词：

GalnAs; HET; OMVPE; Parasitic reaction; Si; 2H6;

D O I：

10.1143/JJAP.29.1910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality n-GaInAs grown by OMVPE using Si2H6is reported. The crystal quality was improved by high-velocity flow and was evaluated based on the sharp peak in X-ray diffraction measurement and large small-signal current gain of the hot electron transistor. © 1990 IOP Publishing Ltd.

引用

页码：1910 / 1911

页数：2

共 6 条

[1] REACTIONS OF PHOSPHINE WITH TRIMETHYLINDIUM [J].