HIGH-CURRENT GAIN GAINAS INP HOT-ELECTRON TRANSISTOR

被引：9

作者：

YAMAURA, S

MIYAMOTO, Y

FURUYA, K

机构：

[1] Department of Electric and Electronics Engineering, Tokyo Institute of Technology, Tokyo, 2-12-1 Meguro-ku, O-okayama

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 14期

关键词：

Semiconductor devices and materials; Transistors;

D O I：

10.1049/el:19900683

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The highest current gain (more than 100 at 77 K) is reported in GalnAs/lnP hot electron transistor (HET) grown by organo-metallic vapour-phase epitaxy. This result shows the promise of the GalnAs/lnP material system for ballistic electron devices. A sudden increase of the collector current in the common-emitter characteristics was observed, which would have been caused by the quantum-interference effect. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1055 / 1056

页数：2

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