HIGH-EFFICIENCY HOT-ELECTRON TRANSPORT IN GAINAS/INP HOT-ELECTRON TRANSISTOR GROWN BY OMVPE

被引：3

作者：

UESAKA, K

YAMAURA, S

MIYAMOTO, Y

FURUYA, K

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 11期

关键词：

D O I：

10.1049/el:19890477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：704 / 705

页数：2

共 8 条

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ELECTRONICS LETTERS, 1988, 24 (05) :279-280

[4] DYNAMICS OF EXTREME NONEQUILIBRIUM ELECTRON-TRANSPORT IN GAAS [J].

HAYES, JR ;

LEVI, AFJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1744-1752

[5] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIER - A HOT-ELECTRON GAAS DEVICE WITH CURRENT GAIN [J].

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THOMAS, DC ;

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NATHAN, MI .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1105-1107

[6]

IMAMURA K, 1985, JPN J APPL PHYS, V24, pL853

[7] GAINAS/INP HOT-ELECTRON TRANSISTORS GROWN BY OMVPE [J].

ISHIHARA, K ;

KINOSHITA, S ;

FURUYA, K ;

MIYAMOTO, Y ;

UESAKA, K ;

MIYAUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06) :L911-L913

[8] OMVPE CONDITIONS FOR GAINAS/INP HETEROINTERFACES AND SUPERLATTICES [J].

MIYAMOTO, Y ;

UESAKA, K ;

TAKADOU, M ;

FURUYA, K ;

SUEMATSU, Y .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :353-358

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