THE INFLUENCE OF GROWTH-CONDITIONS ON THE PLANARITY OF MOVPE GROWN GAINAS(P) INTERFACES

被引：8

作者：

SPURDENS, PC

TAYLOR, MR

HOCKLY, M

YATES, MJ

机构：

[1] British Telecom Research Laboratories, Martlesham Heath, Ipswich

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90459-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Lattice matched InP based GaInAs(P) heterostructures grown by AP-MOVPE have been examined by TEM. Although interfaces appear compositionally abrupt to 1 nm or better, undulations are sometimes observed at GaInAs(P) to InP interfaces that appear to be associated with gas switching procedure. Where this phenomenon is observed we have investigated the influence of growth pauses and growth rate. We find that suitable choices of both these parameters can be used to advantage in improving interface flatness.

引用

页码：215 / 220

页数：6

共 10 条

[1]

Butler B. R., 1988, Chemtronics, V3, P31

[2]

CHEW NG, 1987, I PHYS C SER, V87, P231

[3] GROWTH OF MULTIPLE THIN-LAYER STRUCTURES IN THE GAAS-ALAS SYSTEM USING A NOVEL VPE REACTOR [J].