A TEM STUDY OF GAINASP-INP HETEROJUNCTIONS GROWN BY ATMOSPHERIC-PRESSURE MOVPE

被引：4

作者：

SPURDENS, PC

HOCKLY, M

机构：

来源：

MATERIALS LETTERS | 1986年 / 4卷 / 8-9期

关键词：

D O I：

10.1016/0167-577X(86)90068-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：353 / 356

页数：4

共 10 条

[1] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY GAINAS ON INP [J].

CAREY, KW .

APPLIED PHYSICS LETTERS, 1985, 46 (01) :89-91

[2] GROWTH OF HIGH-QUALITY GAINAS ON INP BUFFER LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

CHAN, KT ;

ZHU, LD ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :44-46

[3]

FRY KL, 1985, APPL PHYS LETT, V46, P855

[4] TEM STUDIES OF MOVPE (GA, IN)AS INTERFACES WITH INP SUBSTRATES [J].

HOCKLY, M ;

WHITE, EAD .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :334-339

[5]

Jeng S. J., 1984, Materials Letters, V2, P359, DOI 10.1016/0167-577X(84)90111-3

[6] STRUCTURE OF MOCVD GROWN ALAS/GAAS HETERO-INTERFACES OBSERVED BY TRANSMISSION ELECTRON-MICROSCOPY [J].

KAJIWARA, K ;

KAWAI, H ;

KANEKO, K ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L85-L88

[7] GAINAS/INP QUANTUM WELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

KUO, CP ;

FRY, KL ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :855-857

[8] GROWTH OF MULTIPLE THIN-LAYER STRUCTURES IN THE GAAS-ALAS SYSTEM USING A NOVEL VPE REACTOR [J].

LEYS, MR ;

VANOPDORP, C ;

VIEGERS, MPA ;

TALENVANDERMHEEN, HJ .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :431-436

[9] NEW APPROACH TO GROWTH OF ABRUPT HETEROJUNCTIONS BY MOVPE [J].

MOSS, RH ;

SPURDENS, PC .

ELECTRONICS LETTERS, 1984, 20 (23) :978-980

[10] IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

PETROFF, PM ;

MILLER, RC ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :217-219

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