TEM STUDIES OF MOVPE (GA, IN)AS INTERFACES WITH INP SUBSTRATES

[1] ALJASSIM MM, 1981, 1980 P MAT RES SOC A, V2, P521

[2] Giess E.A., 1974, EPITAXIAL GROWTH

[3] HAIGH J, UNPUB J CRYSTAL GROW

[4] HAIGH J, 1984, 2ND INT C MET ORG VA

[5] MITZUTANI T, 1980, JPN J APPL PHYS, V19, pL113

[6] A NEW APPROACH TO MOCVD OF INDIUM-PHOSPHIDE AND GALLIUM-INDIUM ARSENIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 129 - 134

[7] GROWTH OF GAXIN1-XAS AND GAXIN1-XASYP1-Y USING PREFORMED ADDUCTS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 96 - 101

[8] CRYSTAL-GROWTH AND PROPERTIES OF BINARY, TERNARY AND QUATERNARY (IN,GA)(AS,P) ALLOYS GROWN BY THE HYDRIDE VAPOR-PHASE EPITAXY TECHNIQUE [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (04): : 309 - 375

[9] THIN-LAYER LIQUID-PHASE EPITAXY OF INGAPAS HETEROSTRUCTURES IN SHORT INTERVALS ()100MS) - NON-DIFFUSION-LIMITED CRYSTAL-GROWTH [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 255 - 285

[10] SUSA N, 1979, JAPAN J APPL PHYS, V2, P309

[1] ALJASSIM MM, 1981, 1980 P MAT RES SOC A, V2, P521

[2] Giess E.A., 1974, EPITAXIAL GROWTH

[3] HAIGH J, UNPUB J CRYSTAL GROW

[4] HAIGH J, 1984, 2ND INT C MET ORG VA

[5] MITZUTANI T, 1980, JPN J APPL PHYS, V19, pL113

[6] A NEW APPROACH TO MOCVD OF INDIUM-PHOSPHIDE AND GALLIUM-INDIUM ARSENIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 129 - 134

[7] GROWTH OF GAXIN1-XAS AND GAXIN1-XASYP1-Y USING PREFORMED ADDUCTS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 96 - 101

[8] CRYSTAL-GROWTH AND PROPERTIES OF BINARY, TERNARY AND QUATERNARY (IN,GA)(AS,P) ALLOYS GROWN BY THE HYDRIDE VAPOR-PHASE EPITAXY TECHNIQUE [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (04): : 309 - 375

[9] THIN-LAYER LIQUID-PHASE EPITAXY OF INGAPAS HETEROSTRUCTURES IN SHORT INTERVALS ()100MS) - NON-DIFFUSION-LIMITED CRYSTAL-GROWTH [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 255 - 285

[10] SUSA N, 1979, JAPAN J APPL PHYS, V2, P309