RESONANT TUNNELLING IN GA0.47IN0.53AS/INP DOUBLE-BARRIER STRUCTURES GROWN BY AP-MOCVD

被引：2

作者：

HIGGS, AW

TAYLOR, LL

APSLEY, N

BASS, SJ

HUTCHINSON, HJ

机构：

[1] Royal Signals & Radar, Establishment, Great Malvern, Engl, Royal Signals & Radar Establishment, Great Malvern, Engl

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 06期

关键词：

D O I：

10.1049/el:19880217

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：322 / 323

页数：2

共 7 条

[1]

BASS SJ, 1986, NATO ASI SERIES, V163

[2] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO [J].

HUANG, CI ;

PAULUS, MJ ;

BOZADA, CA ;

DUDLEY, SC ;

EVANS, KR ;

STUTZ, CE ;

JONES, RL ;

CHENEY, ME .

APPLIED PHYSICS LETTERS, 1987, 51 (02) :121-123

[3]

LEADBEATER ML, 1987, IN PRESS SOLID STATE

[4] OBSERVATION OF A NEGATIVE DIFFERENTIAL RESISTANCE DUE TO TUNNELING THROUGH A SINGLE BARRIER INTO A QUANTUM-WELL [J].

MORKOC, H ;

CHEN, J ;

REDDY, UK ;

HENDERSON, T ;

LURYI, S .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :70-72

[5] NEGATIVE DIFFERENTIAL RESISTANCE AT ROOM-TEMPERATURE FROM RESONANT TUNNELING IN GAINAS/INP DOUBLE-BARRIER HETEROSTRUCTURES [J].

RAZEGHI, M ;

TARDELLA, A ;

DAVIES, RA ;

LONG, AP ;

KELLY, MJ ;

BRITTON, E ;

BOOTHROYD, C ;

STOBBS, WM .

ELECTRONICS LETTERS, 1987, 23 (03) :116-117

[6] Investigation of InGaAs-InP quantum wells by optical spectroscopy [J].

Skolnick, MS ;

Tapster, PR ;

Bass, SJ ;

Pitt, AD ;

Apsley, N ;

Aldred, SP .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (01) :29-40

[7] DEPENDENCE OF THE CONDUCTION IN IN0.53GA0.47AS-INP DOUBLE-BARRIER TUNNELING STRUCTURES ON THE MESA-ETCHING PROCESS [J].

VUONG, THH ;

TSUI, DC ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :1004-1006

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