NEGATIVE DIFFERENTIAL CONDUCTANCE DUE TO RESONANT STATES IN GALNAS-INP HOT-ELECTRON TRANSISTORS

被引：4

作者：

MIYAMOTO, Y

YAMAURA, S

FURUYA, K

机构：

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, O-okayama, Tokyo 152

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 20期

关键词：

D O I：

10.1063/1.103956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed dips with negative values in the curve of the differential conductance of the base versus the base-emitter voltage dIB/dV BE at 77 K in GaInAs/InP hot-electron transistors grown by organometallic vapor phase epitaxy. The efficiency of the hot-electron transmission across the 40-nm-thick base was more than 0.99. In comparison with a theoretical model considering that observed dips should have been caused by the resonant states in the base well, the phase relaxation time of the hot electron is estimated to be in the order of 0.1 ps or longer.

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页码：2104 / 2106

页数：3

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