BALLISTIC TRANSPORT IN SEMICONDUCTOR ALLOYS

被引：25

作者：

KRISHNAMURTHY, S ^{[1
]}

BERDING, MA ^{[1
]}

SHER, A ^{[1
]}

CHEN, AB ^{[1
]}

机构：

[1] AUBURN UNIV,AUBURN,AL 36849

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.340152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4540 / 4547

页数：8

共 23 条

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[2]

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[8] VELOCITY-FIELD CHARACTERISTICS OF III-V SEMICONDUCTOR ALLOYS - BAND-STRUCTURE INFLUENCES [J].

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JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1475-1479

[9] MATERIALS CHOICE FOR BALLISTIC TRANSPORT - GROUP VELOCITIES AND MEAN FREE PATHS CALCULATED FROM REALISTIC BAND STRUCTURES [J].

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[10] BALLISTIC TRANSPORT IN A NONPARABOLIC BAND-STRUCTURE [J].

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