Observation of c(4x4) LEED pattern induced by reaction of Si(100) surface with C2H4

被引：53

作者：

Takaoka, T

Takagaki, T

Igari, Y

Kusunoki, I

机构：

[1] Res. Inst. for Sci. Measurements, Tohoku University, Sendai 980, Katahira 2-1-1, Aoba-ku

[2] Fujitsu Co., Kuwana

来源：

SURFACE SCIENCE | 1996年 / 347卷 / 1-2期

关键词：

alkenes; Auger electron spectroscopy; compound formation; low energy electron diffraction (LEED); silicon; silicon carbide; surface chemical reaction;

D O I：

10.1016/0039-6028(95)00957-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The initial stage of carbide layer formation on a Si(100) surface by reaction with C2H4 gas was studied by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). A c(4 x 4) LEED pattern was clearly observed after an exposure of C2H4 of 5 x 10(-6) Torr for 5 min at a sample temperature of 600 degrees C to the Si(100) surface. Some factors which induce the c(4 x 4) pattern are discussed.

引用

页码：105 / 110

页数：6

共 32 条

[1] LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].