A very simple method of flattening Si(111) surface at an atomic level using oxygen-free water

被引：49

作者：

Fukidome, H ^{[1
]}

Matsumura, M ^{[1
]}

机构：

[1] Osaka Univ, Res Ctr Photoenerget Organ Mat, Toyonaka, Osaka 5608531, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 10A期

关键词：

silicon; surface; flattening; water; oxygen; ammonium sulfite; atomic force microscopy; infrared absorption spectroscopy;

D O I：

10.1143/JJAP.38.L1085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si(111) surfaces were found to be very easily flattened at an atomic level by immersing the wafers in water, from which dissolved oxygen wad removed by the addition of sulfite ion as chemical deoxygenator, at room temperature. After the treatment with this oxygen-free water, the Si(lll) surfaces slightly misoriented in the [11 (2) over bar] direction showed straight and parallel steps and wide terraces under atomic force microscopy observation. When wafers slightly misoriented in the opposite direction were treated in the same manner, the steps showed a characteristic zigzag pattern with an angle of 60 degrees. The steps that appeared on both surfaces were attributable to monohydride steps generated on the edge of flat terraces.

引用

页码：L1085 / L1086

页数：2

共 12 条

[1] Analysis of silicon surface in connection with its unique electrochemical and etching behavior [J].