Growth of Bulky Single Crystalline Films of (Zn,Mg)O Alloy Semiconductors by Liquid Phase Epitaxy

被引：8

作者：

Kobayashi, Jun ^{[1
,2
]}

Sekiwa, Hideyuki ^{[1
,2
]}

Miyamoto, Miyuki ^{[2
]}

Sakaguchi, Isao ^{[1
]}

Wada, Yoshiki ^{[1
]}

Sekiguchi, Takashi ^{[3
]}

Adachi, Yutaka ^{[1
,5
]}

Haneda, Hajime ^{[4
]}

Ohashi, Naoki ^{[1
,5
]}

机构：

[1] Natl Inst Mat Sci, Optron Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[2] Mitsubishi Gas Chem Co Ltd, Tokyo Res Lab, Katsushika Ku, Tokyo 1250051, Japan

[3] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[4] Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[5] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan

来源：

CRYSTAL GROWTH & DESIGN | 2009年 / 9卷 / 02期

关键词：

STIMULATED-EMISSION THRESHOLD; SAPPHIRE SUBSTRATE; ZINC-OXIDE; ZNO; TRANSISTOR; PLASMA;

D O I：

10.1021/cg801211m

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Very thick (about 0.5 mm) single crystalline films of (Zn(1-x)Mg(x))O solid solution have been grown by a liquid phase epitaxy (LPE) technique. The source materials, ZnCo and MgO, were dissolved in a molten PbO-Bi(2)O(3) flux and deposited on ZnO substrates as epitaxial (Zn(1-x)Mg(x))O layers. The (Zn(1-x)Mg(x))O layers thus obtained showed high crystallinity, similar to that of the ZnO substrate, and exhibited n-type conductivity with relatively high Hall mobilities (>90 cm(2) V(-1) s(-1) for x = 0.1 at room temperature). Moreover, the activation energy of the mobile electrons was about 50 meV, and this value was independent of the MgO fraction. Since LPE is an appropriate technique for growing large area films, we examined the growth of (Zn,Mg)O thick films on 2 in. diameter ZnO substrates. The Mg concentration in the LPE grown layer was quite uniform, and the Li concentration was two or three orders lower than an ordinary ZnO substrate.

引用

页码：1219 / 1224

页数：6

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