Properties of Cu(In,Ga)Se2 thin films prepared by chemical spray pyrolysis

被引：41

作者：

Shirakata, S ^{[1
]}

Kannaka, Y

Hasegawa, H

Kariya, T

Isomura, S

机构：

[1] Ehime Univ, Fac Engn, Matsuyama, Ehime 7908577, Japan

[2] Kochi Univ, Fac Sci, Kochi 7808072, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 9A期

关键词：

chemical spray pyrolysis; copper indium diselenide; Cu(In; Ga)Se-2; thin polycrystalline film; Raman spectroscopy;

D O I：

10.1143/JJAP.38.4997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin polycrystalline films of Cu(In,Ga)Se-2 alloy with the single-phase chalcopyrite structure were successfully grown by the chemical spray pyrolysis (CSP) method on a glass substrate at 360 and 400 degrees C. Alloy composition in the film was well controlled by that in the spray solution. The films were characterized by X-ray diffraction, optical absorption, Raman spectroscopy, van der Pauw measurement and scanning electron microscopy. It was found that lattice constants, the optical band-gap energy and the A(1) mode phonon frequency changed continuously with the alloy composition a. A grain size of about 1 mu m was obtained for Cu-rich films.

引用

页码：4997 / 5002

页数：6

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