Threading dislocations in epitaxial ferroelectric PbZr0.2Ti0.8O3 films and their effect on polarization backswitching

被引：61

作者：

Vrejoiu, I. ^{[1
]}

Le Rhun, G. ^{[1
]}

Zakharov, N. D. ^{[1
]}

Hesse, D. ^{[1
]}

Pintilie, L. ^{[1
]}

Alexe, M. ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Salle, Germany

来源：

PHILOSOPHICAL MAGAZINE | 2006年 / 86卷 / 28期

关键词：

D O I：

10.1080/14786430600728653

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The existence of threading dislocations in ferroelectric heterostructures has been frequently reported. However, their origin and impact on the ferroelectric properties are not sufficiently understood. PbZr0.2Ti0.8O3/SrRuO3 heterostructures were epitaxially grown by pulsed-laser deposition (PLD) onto vicinal SrTiO3(001) substrates. The threading dislocations exhibited by the PbZr0.2Ti0.8O3 films were investigated by cross-sectional and plan-view (high-resolution) transmission electron microscopy. Many threading dislocations were dissociated into dipoles spanning a, most probably lead-rich, stacking fault. It is likely that these dislocations are able to pin 180 degrees ferroelectric domains, as suggested by a comparison between piezo-force microscope and transmission electron micrographs obtained on identical samples. Local backswitching of the polarization was observed in the vicinity of such threading dislocations.

引用

页码：4477 / 4486

页数：10

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