Ultrafast carrier dynamics on the Si(100)2x1 surface

被引：28

作者：

Jeong, S

Zacharias, H

Bokor, J

机构：

[1] UNIV ESSEN GESAMTHSCH,FACHBEREICH PHYS,D-45117 ESSEN,GERMANY

[2] UNIV CALIF BERKELEY,DEPT EECS,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.54.R17300

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a study of ultrafast carrier dynamics on the clean Si(100)2X1 surface using time-resolved photoemission spectroscopy. A rapid thermalization inside the surface band is observed, and the carrier relaxation occurs on a time scale of a few hundred femtoseconds to a few picoseconds depending on the initial state energy. The relaxation time increases as the initial state energy decreases with respect to the band minimum.

引用

页码：17300 / 17303

页数：4

共 24 条

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