ELECTRON-ENERGY DISTRIBUTION IN SILICON UNDER PULSED-LASER EXCITATION

被引：11

作者：

BENSOUSSAN, M

MOISON, JM

机构：

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.27.5192

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5192 / 5195

页数：4

共 16 条

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[7] ELECTRONIC-STRUCTURE OF SILICON
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COHEN, ML
[J]. PHYSICAL REVIEW B, 1974, 10 (12): : 5095 - 5107
[8] FEUERBACHER B, 1978, PHOTOEMISSION ELECTR
[9] ELECTRON SCATTERING BY PAIR PRODUCTION IN SILICON
KANE, EO
[J]. PHYSICAL REVIEW, 1967, 159 (03): : 624 - &
[10] LEY L, 1978, PHOTOEMISSION SOLIDS, V2, P11