Enlargement of ''location controlled'' Si grains by dual-beam excimer-laser with bump structures

被引：10

作者：

Burtsev, A ^{[1
]}

Ishihara, R ^{[1
]}

机构：

[1] Delft Univ Technol, Delft Inst Microelect & Submicron Technol, Lab Elect Components Technol & Mat, ECTM,DIMES, NL-2600 GB Delft, Netherlands

来源：

APPLIED SURFACE SCIENCE | 2000年 / 154卷

关键词：

excimer-laser; single crystal silicon; location control; grain size; thin-film transistors;

D O I：

10.1016/S0169-4332(99)00439-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of thickness variation of an intermediate insulator layer on the grain size of a recrystallized large Si grain in an a-Si/SiO2/metal stack with an array of bumps in the oxide has been investigated. Increased thickness of the intermediate oxide portion and bump height resulted in grain size enlargement of the Si grain. Si crystal grains as large as 5.1 mu m were obtained located exactly at the desired position on the oxide. The explanation of the growth-enhanced mechanism by the solidification rate behavior, based on numerical simulation in terms of temperature gradient arguments is given. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：152 / 158

页数：7

共 15 条

[11] HIGH-MOBILITY POLY-SI THIN-FILM TRANSISTORS FABRICATED BY A NOVEL EXCIMER LASER CRYSTALLIZATION METHOD [J].