Determination of the absolute fluence profile in pulsed laser processing using melt-induced phase changes in an amorphous silicon thin film

被引：5

作者：

Leonard, J. P. ^{[1
]}

机构：

[1] Univ Pittsburgh, Dept Mat Sci & Engn, Pittsburgh, PA 15261 USA

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2006年 / 77卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2198727

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A simple silicon-based thin film multilayer configuration is used to obtain measurements of beam profiles in a pulsed excimer projection system with fluence levels similar to melt-mediated materials processing. Abrupt transitions between amorphous and polycrystalline phases are found at the onset of melting, and at the attainment of complete melting in a thin silicon film encapsulated between SiO2 layers. When combined with a standard technique for absolute determination of fluence under flood irradiation using bulk melting of silicon, a device for measurement of the two-dimensional absolute fluence profile is realized. With this technique fluence profiles can be estimated within +/- 25 mJ/cm(2) at a lateral spatial resolution of 0.5 mu m. (c) 2006 American Institute of Physics.

引用

页数：6

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