Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications

被引：5

作者：

Chakrabarti, P ^{[1
]}

Krier, A

Huang, XL

Fenge, P

机构：

[1] Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi 221005, Uttar Pradesh, India

[2] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 05期

关键词：

detectivity; InAs/InAsSb; mid-infrared (MIR) photodetector; trap-assisted tunneling (TAT); zero-bias resistance area product;

D O I：

10.1109/LED.2004.826979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report an InAsSb p(+)-n junction photodetector grown on InAs substrate by liquid phase epitaxy. Electrical and optical characterizations of the device have been carried out at room temperature for operation of the device in the mid-infrared region. The study revealed that the dark current of the photodetector under reverse bias is dominated by a trap-assisted tunnelling current component, which degrades the detectivity of the device. Further, by operating the device at a suitable low reverse bias it is possible to improve the room-temperature detectivity significantly as compared to its value at zero bias.

引用

页码：283 / 285

页数：3

共 10 条

[1] ABSORPTION CONSTANT OF PB1-XSNXTE AND HG1-XCDXTE ALLOYS [J].