Analysis of dark current contributions in mercury cadmium telluride junction diodes

An analytical approach to analyze the dark current-voltage (I-P) and dynamic impedance vs reverse bias voltage (R-d-V) characteristics of an HgCdTe junction diode is presented in this paper. Application to the experimental data is discussed to illustrate the approach. It is shown that the relative contributions of the various dark current contributing mechanisms viz. diffusion, generation-recombination, thermal trap assisted tunneling, band-to-band tunneling, avalanche multiplication and ohmic current component can all be isolated, if present. (C) 2002 Elsevier Science B.V. All rights reserved.