REVERSE BREAKDOWN IN LONG WAVELENGTH LATERAL COLLECTION CDXHG1-XTE DIODES

被引：44

作者：

ELLIOTT, CT ^{[1
]}

GORDON, NT ^{[1
]}

HALL, RS ^{[1
]}

CRIMES, G ^{[1
]}

机构：

[1] PHILIPS COMPONENTS,SOUTHAMPTON S09 7BH,HANTS,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.576954

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Long wavelength diodes in CdxHg1-xTe show large deviations from ideality in their reverse characteristics. The excess currents are attributed in many published papers to band to band tunneling at high reverse bias and to trap assisted tunneling at low reverse bias. Measurements of photocurrent multiplication, current-voltage characteristics, and noise have been made on long wavelength loophole diodes to determine the breakdown mechanism. This has produced strong evidence that the reverse characteristics of good quality diodes of this type are limited by impact ionization. At higher biases, there is evidence of an additional breakdown mechanism, probably tunneling. © 1990, American Vacuum Society. All rights reserved.

引用

页码：1251 / 1253

页数：3

共 11 条

[1] TUNNEL CURRENT LIMITATIONS OF NARROW BANDGAP IR CHARGE COUPLED DEVICES [J].