IMPACT IONIZATION RATES FOR ELECTRONS AND HOLES IN HG0.3CD0.7TE IN AVALANCHE PHOTODIODES FOR OPTICAL FIBER TRANSMISSION-SYSTEMS AT LAMBDAL-=1.3 MU-M

被引：7

作者：

ORSAL, B ^{[1
]}

ALABEDRA, R ^{[1
]}

VALENZA, M ^{[1
]}

PICHARD, G ^{[1
]}

MESLAGE, J ^{[1
]}

机构：

[1] SOC ANONYME TELECOMMUNICAT,17 RUE CANTAGREL,F-75013 PARIS,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 72卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(85)90197-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：496 / 503

页数：8

共 8 条

[1]

ALABEDRA R, IEEE T ELECTRON DEVI

[2] GA1-XALXSB AVALANCHE PHOTO-DIODES - RESONANT IMPACT IONIZATION WITH VERY HIGH RATIO OF IONIZATION COEFFICIENTS [J].

HILDEBRAND, O ;

KUEBART, W ;

BENZ, KW ;

PILKUHN, MH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :284-288

[3] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

MCINTYRE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+

[4]

MIKHAILOVA MP, 1976, SOV PHYS SEMICOND+, V10, P509

[5]

MORITANI A, 1973, J PHYS SOC JAPAN, V34, P73

[6]

ROYER M, 1983, ANN TELECOMMUN, V98, P62

[7]

STILLMAN GE, 1977, SEMICONDUCTORS SEMIM, V12

[8] BANDGAP SPIN ORBIT SPLITTING RESONANCE EFFECTS IN HG1-XCDXTE ALLOYS [J].

VERIE, C ;

RAYMOND, F ;

BESSON, J ;

DUY, TN .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :342-346

← 1 →