Room temperature InAsxP1-x-ySby/InAs photodetectors with high quantum efficiency

被引：26

作者：

Gong, XY ^{[1
]}

Yamaguchi, T ^{[1
]}

Kan, H ^{[1
]}

Makino, T ^{[1
]}

Iida, T ^{[1
]}

Kato, T ^{[1
]}

Aoyama, M ^{[1
]}

Hayakawa, Y ^{[1
]}

Kumagawa, M ^{[1
]}

机构：

[1] SHIZUOKA UNIV,ELECT RES INST,HAMAMATSU,SHIZUOKA 432,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 5A期

关键词：

InAsPSb; liquid phase epitaxy; photodetector; responsivity; quantum efficiency; detectivity;

D O I：

10.1143/JJAP.36.2614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature surface-illuminated InAsxP1-x-ySby/InAs photodiodes with an external quantum efficiency as high as 50-86% in a 1.83-3.53 mu m wavelength range have been fabricated for the first time. Lattice matched heterostructures with a wide energy gap InAsPSb cap layer were grown ou the InAs substrate using the Liquid phase epitaxy technique. According to temperature dependence measurements for a 1 mm diameter photodiode, peak responsivities of 1.85-2.5 A/W have been realized in a temperature range of 296 to 200 K. The Johnson noise limited room temperatnre detectivities D* are deduced to be 1-6 x 10(9) cm.Hz(1/2)/W at zero bias. It is demonstrated that the only loss of external quantum efficiency is from the reflection of the entrance face.

引用

页码：2614 / 2616

页数：3

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